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| STD/SDT49 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 STD/SDT49GK08 STD/SDT49GK12 STD/SDT49GK14 STD/SDT49GK16 STD/SDT49GK18 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0 2 Test Conditions Maximum Ratings 80 49 Unit A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=150A 1150 1230 1000 1070 6600 6280 5000 4750 150 A i dt TVJ=45oC VR=0 TVJ=TVJM VR=0 A2s TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=0.45A diG/dt=0.45A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA A/us non repetitive, IT=ITAVM 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 t=1min t=1s 3000 3600 2.5-4.0/22-35 2.5-4.0/22-35 90 V/us W W V o TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=300us C V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M5) Typical including screws STD/SDT49 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values 5 1.75 0.85 5.3 VD=6V; VD=6V; TVJ=TVJM; o Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25 C; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us TVJ=TVJM; IT=120A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=50A; -di/dt=0.64A/us typ. o IT, IF=200A; TVJ=25 C For power-loss calculations only (TVJ=125oC) o o TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM 1.5 1.6 100 200 0.2 10 450 200 2 150 90 11 0.53 0.265 0.73 0.365 12.7 9.6 50 FEATURES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * DC motor control * Softstart AC motor controller * Light, heat and temperature control ADVANTAGES * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits STD/SDT49 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature 10 1: IGT, TVJ = 125 C V VG 2: IGT, TVJ = 25 C 3: IGT, TVJ = -40 C 3 1 1 4 2 5 6 4: PGAV = 0.5 W IGD, TVJ = 125 C 0.1 100 101 102 5: PGM = 5W 6: PGM = 10 W 103 IG mA 104 Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 4 Gate trigger characteristics 1000 TVJ = 25 C s tgd typ. 100 Limit 3 x STD/SDT49 10 1 10 100 IG mA 1000 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Gate trigger delay time STD/SDT49 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3 x STD/SDT49 STD/SDT49 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC o 180 C o 120 C o 60 C o 30 C RthJC (K/W) 0.53 0.55 0.58 0.6 0.62 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.015 0.026 0.489 ti (s) 0.0035 0.02 0.195 STD/SDT49 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC o 180 C o 120 C o 60 C o 30 C RthJK (K/W) 0.73 0.75 0.78 0.8 0.82 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.015 0.026 0.489 0.2 ti (s) 0.0035 0.02 0.195 0.68 |
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